Function | Frequency | Insertion Loss | Isolation | IP3 | RON | Power (CW, max) | Switch Speed | Lifetime | Controller | VBB or VIN VDD | Packaging | |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MM5600 | DPDT | DC–20 GHz 40 Gbps | 1.3 dB @ 10 GHz | 24 dB @ 10 GHz | 77 dBm | 1.2 Ω | 2 W | <10 µs | >3B cycles | SPI (2) | 89 V 5 V | 8 x 8 mm LGA |
MM5620 | 2x DP3T | DC-20 GHz 64 Gbps | 1.5 dB @ 16 GHz | 67 dB @ 16 GHz | 1.7 Ω | 0.1 W (3) | <30 µs | >3B cycles | SPI/GPIO | 5 V 3.3 V | 8.2 x 8.2 mm LGA | |
MM5622 | 2x DP3T | DC-20 GHz 64 Gbps | 1.1 dB @ 16 GHz | 58 dB @ 16 GHz | 1.7 Ω | 0.1 W (4) | <30 µs | >3B cycles | SPI/GPIO | 5 V 3.3 V | 8.2 x 8.2 mm LGA | |
MM5130 | SP4T (normal-port mode) SPST (super-port mode) (1) | DC–18 GHz DC–26 GHz | 0.1-1.3 dB 0.1-1.0 dB | 25dB @ 6 GHz 45dB @ 6 GHz | 95 dBm | 1.2 Ω | 25 W | <10 µs | >3B cycles | Direct Drive | 89 V | 2.5 x 2.5 mm WL-CSP |
MM5120 | SP4T | DC–18 GHz | 0.1-1.5 dB | 26 dB @ 6 GHz | 90 dBm | 1.0 Ω | 25 W | <15 µs | >3B cycles | SPI/GPIO | 5 V 3.3 V | 5.2 x 4.2 mm LGA |
MM5140 | SP4T | DC-8 GHz | 0.1-0.5 dB | 32 dB @ 3 GHz | 90 dBm | 1.0 Ω | 25 W | <15 µs | >3B cycles | SPI/GPIO | 5 V 3.3 V | 5.2 x 4.2 mm LGA |
(1) Refer to datasheet for other configurations.
(2) SPI control signals: Data, Clock, Blank, Latch
(3) For AC-coupled signal paths
(4) DC-coupled signal paths
The MM5130 is the world’s first generally available high-power SP4T RF Ideal Switch.
It can handle 25 W forward power while providing ultra-low insertion loss. It has superior linearity from 26 GHz down to DC and performs more than 3 billion switching cycles.
The four switch channels are individually controllable by applying voltage to the corresponding RF GATE pin.
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MM5130 | EM (SMT) SPDT | EM (Coax) SPDT | Key Benefits | |
---|---|---|---|---|
Max Frequency | 26 GHz | 6 GHz | 18 GHz | |
Insertion Loss | 0.4 dB @ 6GHz | 0.8 dB @ 6GHz | 0.2 dB @ 6GHz | |
Isolation | 45 dB @ 6GHz | 25 dB | 70 dB @ 6GHz | |
Power Handling | 25 W (CW) >150 W (Pulsed) | 50 W | 50 W - 100 W | |
Linearity (IP3) | 95 dBm | 62 dBm | >1000x improvement | |
Power Consumption | <0.08 mW | 140 mW | 5000 mW | 94-99% reduction |
Reliability | >3B Operations | 10M Operations | 1-5M Operations | >1000x improvement |
Switching Speed | <10 µs | 3-5 ms | 10-20 ms | >1000x improvement |
Size/Channel Density | 5.6 mm3 2.5 x 2.5 x 0.9 mm BGA | 1280 mm3 16 x 8 x 10 mm SMT | 30,000 mm3 50 x 50 x 13 mm COAX | >99% reduction |
The MM5120 is the world’s first generally available high-power SP4T RF Ideal Switch.
This new innovative technology platform enables robust and highly reliable switches capable of >25 W CW power handling at 6.0 GHz. The MM5120 provides ultra-low insertion loss and superior linearity from DC to 18 GHz with >3 billion switching cycles.
The MM5120 features an integrated charge pump and driver circuit with SPI and GPIO interface control options.
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MM5120 | EM (SMT) SPDT | EM (Coax) SPDT | Key Benefits | |
---|---|---|---|---|
Max Frequency | 18 GHz | 6 GHz | 18 GHz | |
Insertion Loss | 0.4 dB @ 6GHz | 0.8 dB @ 6GHz | 0.2 dB @ 6GHz | |
Isolation | >25 dB @ 6GHz | 25 dB | 70 dB @ 6GHz | |
Power Handling | 25 W (CW) >150 W (Pulsed) | 50 W | 50 W - 100 W | |
Linearity (IP3) | >90 dBm | 62 dBm | 99% reduction in power consumption | |
Power Consumption | <15 mW | 140 mW | 5000 mW | 90-99% reduction |
Reliability | >3B Operations | 10M Operations | 1-5M Operations | >1000x improvement |
Switching Speed | < 15 µs | 3-5 ms | 10-20 ms | >1000x improvement |
Size/Channel Density | 33 mm3 5.2 x 4.2 x 1.5 mm LGA | 1280 mm3 16 x 8 x 10 mm SMT | 30,000 mm3 50 x 50 x 13 mm COAX | >99% reduction |
The MM5140 is the world’s highest performance generally available SP4T RF Ideal Switch module.
This new innovative technology platform enables robust and highly reliable switches capable of 25 W CW power handling at 3.0 GHz. The MM5140 provides ultra-low insertion loss and superior linearity from DC to 8 GHz with >3 billion switching cycles.
The MM5140 features an integrated charge pump and driver circuit with SPI and GPIO interface control options.
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MM5140 | EM (SMT) SPDT | EM (Coax) SPDT | Key Benefits | |
---|---|---|---|---|
Max Frequency | 8 GHz | 6 GHz | 18 GHz | |
Insertion Loss | 0.5 dB @ 8GHz | 0.8 dB @ 6GHz | 0.2 dB @ 6GHz | |
Isolation | >25 dB @ 6GHz | 25 dB | 70 dB @ 6GHz | |
Power Handling | 25 W (CW) >150 W (Pulsed) | 50 W | 50 W - 100 W | |
Linearity (IP3) | >90 dBm | 62 dBm | 99% reduction in power consumption | |
Power Consumption | <15 mW | 140 mW | 5000 mW | 90-99% reduction |
Reliability | >3B Operations | 10M Operations | 1-5M Operations | >1000x improvement |
Switching Speed | <15 µs | 3-5 ms | 10-20 ms | >1000x improvement |
Size/Channel Density | 33 mm3 5.2 x 4.2 x 1.5 mm LGA | 1280 mm3 16 x 8 x 10 mm SMT | 30,000 mm3 50 x 50 x 13 mm COAX | >99% reduction |
The MM5600 is a DPDT switch that can operate up to 40 Gbps and is perfect for high-speed differential signal switching.
The MM5600’s integrated driver can be controlled by a serial-to-parallel interface that drives the high voltage gate lines of the switches. The design also offers a considerable 94% reduction in size when compared to conventional EM relay solutions.
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MM5600 | EM (SMT) SPDT | Key Benefits | |
---|---|---|---|
Market | High-speed digital & RF DIB/PIB market | High-speed digital & RF DIB/PIB market | |
Configuration | DPDT, DC-20 GHz / 40 Gbps | DPDT, 20 Gbps | "Differential crossover" simplifies routing |
Power Consumption | < 0.08 mW | 200 mW | 99% reduction in power consumption |
Reliability | >3B operations | 1-5M operations | 1000x increase in lifetime: reduced down-time, maintenance and cost |
Switching Speed | <10 µs operation time <2 µs release time | 6 ms operation time | 1000x speed increase: reduced test time and cost-to-test |
Size/Chip Density | 102.4 mm3 8 x 8 x 1.6 mm LGA | 819 mm3 SMT 10.3(d) x 11.8 (h) | 94% volume reduction: enables more parallel tests, easier routing (top and/or bottom) |
The MM5620 is a high-speed differential loopback switch (AC coupled) supporting the high-speed differential signal switching required in PCIe Gen 6, SerDes and other applications. The MM5620 is based on Menlo’s Ideal Switch® technology and can operate up to 64 Gbps or 20 GHz for high-performance applications.
The MM5620 has low insertion loss, fast switching speed, and can operate with greater than 3 billion switching cycles. The MM5620’s integrated charge pump and driver can be controlled through SPI or GPIO interfaces by a host processor.
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MM5620 | EM (SMT) SPDT | Key Benefits | |
---|---|---|---|
Market | High-speed digital & RF DIB/PIB market | High-speed digital & RF DIB/PIB market | |
Configuration | DP3T DC-20 GHz/64 Gbps | SPDT 18 GHz/40 Gbps | Dual DP3T with built-in loopback capacitor |
Power Consumption | < 10 mW | 200 mW | 95% reduction in power consumption |
Reliability | >3B operations | 3M operations | 1000x increase in lifetime: reduced down-time, maintenance and cost |
Switching Time | <30 µs | 5 ms operation time | x165 speed increase: reduced test time and cost-to-test |
Size/Chip Density | 141.2 mm3 8.2 x 8.2 x 2.1 mm LGA | 1103.3 mm3 SMT 11x8.5(d) x 11.8 (h) | 85% volume reduction: enables more parallel tests, easier routing (top and/or bottom) |
The MM5622 is a high-speed differential loopback switch (DC coupled) supporting the high-speed differential signal switching required in the latest PCIe Gen 5, Gen 6, SerDes, and other standards. The MM5622 is based on Menlo’s Ideal Switch® technology and can operate at 64 Gbps with a bandwidth of 20 GHz for high-performance applications.
The MM5622 has low insertion loss, fast switching speed, and can operate with greater than 3 billion switching cycles. The MM5622 system-in-package (SiP) solution fully integrates the switch driver and charge pump controlled through SPI or GPIO interfaces by a host processor. In addition, integrated decoupling capacitors provide significant board footprint reduction for high-volume production test solutions.
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MM5622 | EM (SMT) SPDT | Key Benefits | |
---|---|---|---|
Market | High-speed digital & RF DIB/PIB market | High-speed digital & RF DIB/PIB market | |
Configuration | DP3T DC-20 GHz/64 Gbps | SPDT 18 GHz/40 Gbps | Dual DP3T with built-in decoupling capacitor |
Power Consumption | < 10 mW | 200 mW | 95% reduction in power consumption |
Reliability | >3B operations | 3M operations | 1000x increase in lifetime: reduced down-time, maintenance and cost |
Switching Time | <30 µs | 5 ms operation time | x165 speed increase: reduced test time and cost-to-test |
Size/Chip Density | 141.2 mm3 8.2 x 8.2 x 2.1 mm LGA | 1103.3 mm3 SMT 11x8.5(d) x 11.8 (h) | 85% volume reduction: enables more parallel tests, easier routing (top and/or bottom) |